PART |
Description |
Maker |
K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification 256Mb DDR SDRAM DDR SDRAM Specification Version 1.0 128MB DDR SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 184-Pin Unbuffered Dual-In-Line Memory Modules DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet 128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. DDR SDRAM Specification Version 0.61 128Mb DDR SDRAM 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor http://
|
HY5DU28422ET |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
EBD13UB6ALS-75 EBD13UB6ALS-7A EBD13UB6ALS EBD13UB6 |
128MB DDR SDRAM S.O. DIMM
|
Elpida Memory
|
V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
EBD12RB8ALFB-75 EBD12RB8ALFB-7A EBD12RB8ALFB-1A EB |
128MB Registered DDR SDRAM DIMM SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX72 |的CMOS |内存| 184PIN |塑料
|
Elpida Memory Murata Manufacturing Co., Ltd.
|